AON3613 30v complementary mosfet general description product summary n-channel p-channel v ds (v) = 30v v ds (v) = -30v i d = 4.5a i d = -4.5a (v gs = 10v) r ds(on) < 52m w r ds(on) < 68m w (v gs = 10v) r ds(on) < 60m w r ds(on) < 100m w (v gs = 4.5v) esd protection hbm class 3a symbol v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted max p-channel max n-channel 30 drain-source voltage -30 the AON3613 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets may be used in inverter and other applications. g1 d1 s1 n-channel p-channel top view g1 s1 g2 s2 d1 d1 d2 d2 dfn 3x3 top view bottom view g2 d2 s2 v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl symbol t 10s steady-state steady-state r q jl maximum junction-to-lead 30 40 c/w a max units maximum junction-to-ambient a r q ja 50 60 c/w maximum junction-to-ambient a d 80 100 c/w 20 thermal characteristics: p-channel junction and storage temperature range -55 to 150 50 80 60 parameter typ max maximum junction-to-ambient a parameter typ c thermal characteristics: n-channel units c/w r q ja -55 to 150 v 30 drain-source voltage -30 t a =25c t a =70c pulsed drain current c continuous drain current v gate-source voltage 20 i d -4.5 12 4.5 -3.5 -20 3.5 power dissipation b t a =25c p d 2.1 c/w c/w maximum junction-to-ambient a d 30 100 40 maximum junction-to-lead 2.1 w t a =70c 1.3 1.3 rev 1: sep. 2012 www.aosmd.com page 1 of 9
AON3613 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.7 1.05 1.5 v i d(on) 20 a 42 52 t j =125c 66 82 47 60 m w g fs 15 s v sd 0.75 1 v i s 2.5 a c iss 245 pf c oss 35 pf c rss 20 pf r g 5.3 w q g (10v) 5.7 10 nc q g (4.5v) 2.6 5 nc q gs 0.5 nc q gd 1 nc t d(on) 2 ns t 3.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =15v, r =3.3 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =4.5a gate source charge gate drain charge total gate charge static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =4.5a v gs =4.5v, i d =3a n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =4.5a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters v ds =v gs , i d =250 m a v ds =0v, v gs =10v gate-body leakage current forward transconductance diode forward voltage r ds(on) t r 3.5 ns t d(off) 22 ns t f 3.5 ns t rr 6.5 ns q rr 7.5 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =4.5a, di/dt=500a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =3.3 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =4.5a, di/dt=500a/ m s a. the value of r qja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r qja is the sum of the thermal impedance from junction t o lead r qjl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. rev 1: sep. 2012 www.aosmd.com page 2 of 9
AON3613 n-channel typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 0 1 2 3 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 20 40 60 80 0 2 4 6 8 10 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =3a v gs =10v i d =4.5a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2v 4.5v 10v 2.5v 2.1 2.5 1.3 1.6 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =4.5a 25 c 125 c rev 1: sep. 2012 www.aosmd.com page 3 of 9
AON3613 n-channel typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =4.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 10s 100ms 2.1 2.5 1.3 1.6 ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =100 c/w rev 1: sep. 2012 www.aosmd.com page 4 of 9
AON3613 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rm rr vdd vdd q = - idt t rr vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ar rev 1: sep. 2012 www.aosmd.com page 5 of 9
AON3613 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.3 -1.8 -2.3 v i d(on) -20 a 56 68 t j =125c 79 96 80 100 m w g fs 8 s v sd -0.78 -1 v i s -2.5 a c iss 290 pf c oss 60 pf c rss 40 pf r g 16 w q g (10v) 5.8 10 nc q g (4.5v) 2.8 6 nc q gs 1.1 nc q gd 1.3 nc t d(on) 6 ns t 5 ns m w on state drain current p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-4.5a r ds(on) i dss m a v ds =v gs , i d =-250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current v gs =-4.5v, i d =-3a forward transconductance diode forward voltage v =-10v, v =-15v, r =3.3 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge turn-on rise time v gs =-10v, v ds =-15v, i d =-4.5a gate source charge gate drain charge total gate charge reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz static drain-source on-resistance i s =-1a,v gs =0v v ds =-5v, i d =-4.5a switching parameters maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters t r 5 ns t d(off) 21 ns t f 9 ns t rr 10 ns q rr 20 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =-10v, v ds =-15v, r l =3.3 w , r gen =3 w turn-off fall time turn-on rise time body diode reverse recovery charge i f =-4.5a, di/dt=500a/ m s turn-off delaytime i f =-4.5a, di/dt=500a/ m s body diode reverse recovery time a. the value of r qja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r qja is the sum of the thermal impedance from junction t o lead r qjl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. rev 1: sep. 2012 www.aosmd.com page 6 of 9
AON3613 p-channel typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 1 2 3 4 5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 20 40 60 80 100 120 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-3a v gs =-10v i d =-4.5a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3v -3.5v -4.5v -6v -10v -4v 2.1 2.5 1.3 1.6 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 60 100 140 180 220 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-4.5a 25 c 125 c rev 1: sep. 2012 www.aosmd.com page 7 of 9
AON3613 p-channel typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-4.5a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 100ms 10s 2.1 2.5 1.3 1.6 ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =100 c/w rev 1: sep. 2012 www.aosmd.com page 8 of 9
AON3613 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v v d c d u t v d d v g s v d s v g s r l r g r e s is tiv e s w itc h in g t e s t c irc u it & w a v e fo rm s - + v g s v d s t t t t t t 9 0 % 1 0 % r o n d (o ff) f o ff d (o n ) id vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss ig v gs - + v d c d u t l v gs isd d iode r e covery te st c ircuit & w aveform s vds - v ds + di/dt r m rr v dd v dd q = - idt t rr -isd -vds f -i -i vdd vgs vgs rg dut vdc vgs id vgs - + bv dss i ar rev 1: sep. 2012 www.aosmd.com page 9 of 9
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